| CMOS | Complementary metal oxide semiconductor | |||
| DWDM | Dense wavelength division multiplexing | |||
| DARPA | Defense Advanced Research Projects Agency | |||
| DVE | Driver's vision enhancer | |||
| EMD | Engineering and manufacturing development | |||
| EO | Electro-optic, electro-optical | |||
| EOSS | Electro-optical sensor system | |||
| FLIR | Forward-looking infrared | |||
| FPA | Focal plane array | |||
| FTIR | Fourier Transform Infrared | |||
| HTI | Horizontal technology integration | |||
| IBC | Impurity band conduction | |||
| InSb | Indium antimonide | |||
| IR FPA | Infrared focal plane array | |||
| IR | Infrared | |||
| ITU | International Telecommunications Union | |||
| LWIR | Long-wave infrared | |||
| MCT | Mercury cadmium telluride | |||
| MIR | Mid infrared | |||
| MWIR | Midwave infrared | |||
| NASA | National Aeronautics and Space Administration | |||
| NETD | Noise equivalent temperature difference | |||
| NIR | Near infrared | |||
| OADM | Optical add/drop multiplexers | |||
| OEM | Original equipment manufacturer | |||
| OLA | Optical line amplifiers | |||
| OSA | Optical spectrum analyzers | |||
| OSC | Optical supervisory channel | |||
| PtSi | Platinum silicide | |||
| QWIP | Multiple quantum well infrared photodetector | |||
| SADA | Standard advanced dewar assembly | |||
| SiX | Extrinsic silicon | |||
| SWIR | Short wave infrared | |||
| TE | Thermo-electric | |||
| UV | Ultraviolet |