Markets
Infrared detector types and materials
Photon Detectors |
Energy Detectors |
||
| Intrinsic, PV | MCT | Bolometers | Vanadium Oxide (V2O5) |
| Si, Ge | Poly-SiGe | ||
| InGaAs | Poly-Si | ||
| InSb, InAsSb | Amorph Si | ||
| Intrinsic, PC | MCT | Thermopiles | Bi/Sb |
| PbS, PbSe | Pyroelectric | Lithium Tantalite (LiTa) | |
| Extrinsic | SiX | ||
| Photo-emissive | PtSi | Ferro-electric | Barium Strontium |
| QWIP | GaAs/AIGaAs | Micro cantilever | Bimetals |
Many of these IR materials are based on compound semiconductors made of III-V elements such as indium, gallium, arsenic, antimony, or on the II-VI elements mercury, cadmium and telluride, or on the IV-VI elements lead, sulfur and selenide. They can be combined into binary compounds such as GaAs, InSb, PbS and PbSe or into ternaries such as InGaAs or HgCdTe.
