Semiconductor Inspection

The spectrum of low-level photon emissions caused by semiconductor crystal grid defects matches exactly the most sensitive realm of SWIR cameras fitted with thermoelectrically cooled InGaAs- or HgCdTe area sensors. Such sensors are therefore well suited for failure analysis and quality assurance tasks in semiconductor manufacturing. The positive results of these procedures can be successfully migrated to the economical characterization of nano-technology devices.

		Emission microscopy Photoemission microscopy, or light emission microscopy, is a relatively new failure analysis technique for detecting photonic radiation from a defect site, …
		Failure analysis Targeted failure analysis as applied in microelectronics is usually carried out in a five-step sequence: First is fault validation, …
		Solar cell inspection SWIR imaging enables you to look “through” the silicon wafer and therefore allows inspection of defects and failures, which cannot be detected and visualized by …

Discover which camera could suit your needs

XS-1.7-320	Xeva-1.7-320
Flexibility for easy research	Advanced research in SWIR imaging
Xeva-1.7-640	Xeva-2.5-320
Advanced research in SWIR imaging	Flexible SWIR imaging camera up till 2.5 µm
Xeva-Lin-1.7	Cheetah-640CL
0.9 - 1.7 µm InGaAs linear array	World's fastest InGaAs CameraLink camera