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Semiconductor Inspection
The spectrum of low-level photon emissions caused by semiconductor crystal grid defects matches exactly the most sensitive realm of SWIR cameras fitted with thermoelectrically cooled InGaAs- or HgCdTe area sensors. Such sensors are therefore well suited for failure analysis and quality assurance tasks in semiconductor manufacturing. The positive results of these procedures can be successfully migrated to the economical characterization of nano-technology devices.
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Emission microscopyPhotoemission microscopy, or light emission microscopy, is a relatively new failure analysis technique for detecting photonic radiation from a defect site, …
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Failure analysisTargeted failure analysis as applied in microelectronics is usually carried out in a five-step sequence: First is fault validation, … |
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Solar cell inspectionSWIR imaging enables you to look “through” the silicon wafer and therefore allows inspection of defects and failures, which cannot be detected and visualized by …
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Discover which camera could suit your needs
| Bobcat-640-CL | Bobcat-640-GigE |
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Low noise & dark current
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Low noise & dark current
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| Cheetah-640CL | Gobi-CL |
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World's fastest InGaAs CameraLink camera
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Smallest thermal CameraLink camera
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| Lynx-CL | Lynx-GigE |
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Uncooled SWIR line-scan camera
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Uncooled SWIR line-scan camera  |
| Xeva-1.7-320 | Xeva-1.7-640 |
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Advanced research in SWIR imaging
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Advanced research in SWIR imaging
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| Xeva-2.5-320 | XS-1.7-320 |
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Flexible SWIR imaging camera up till 2.5 µm
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Flexibility for easy research |
Download article: Successful semiconductor inspection with infrared imaging
